Organization of the production of the porous InP

Організація виробництва поруватого фосфіду індію
New substances and materials Semiconductors and semiconductor equipment

Innovation refers to the development of new materials (nanomaterials), namely, methods for their obtaining. Propose a method of producing of the porous indium phosphide (por-InP), namely electrochemical etching of single crystal of the indium phosphide in acid solutions. Developers found the optimal composition and concentration of electrolyte to form a high-quality porous layers of indium phosphide with the specified parameters. Microelectronics is on the way to reduce objects. There is a natural need for the creation and synthesis of new materials that could be used as raw material for the production of the elements of modern technology. Nanomaterials are objects, one of the characteristic size is in the range of 1 to 100 nm. One of the promising trends - the creation of porous structures on semiconductor surfaces. Porous indium phosphide is considered as raw materials for production:
- Solar cells, supercapacitors (due to the huge effective area);
- Semiconductor lasers, LEDs, optoelectronic devices (due to their ability to emit in the visible range);
- Gas and biomolecular sensors (with the ability to adjust the size and shape of the pores)
- Buffer layers (substrates for geterostrukturc to reduce internal stresses);
- photonic and photovoltaic devices (reduced optical reflectance in the visible region of the spectrum)

Recently, intensive development of various methods for the formation of self-organized structures, including a rather expensive method of molecular-beam epitaxy or organometallic epitaxy with the gas phase (MOVPE). A possible alternative to these methods - the use of electrochemical processes. An electrochemical method has the following advantages:
- Does not require special expensive equipment;
- A technologically simple;
- Low temperature process;
- Small surface damage;
- Low cost;
- Allows you to obtain porous layers of high quality;
- Selecting the appropriate conditions, can control the pore diameter, thickness and porosity of the porous layer.

Problem solved
1. The need for new microelectronic materials (size reduction, new properties);
2. The need for cheaper methods of the obtaining of nanomaterials;
3. The need to optimize methods of obtaining of nanomaterials, identifying common patterns;
4. The need to obtain new sources of energy (solar power), to store energy (batteries, supercapacitors, batteries);
5. The need to improve the performance of light-emitting devices (LEDs, lasers).

Development status:
Prototype with favorable lab results

Potential customers:
Initially, the main buyers of the products are research institutes and universities, which are conducted on the basis of scientific developments in this direction.
It is planned to increase the demand for porous fosfіd India as raw material for indium nitride. In this case, potential buyers are the following companies:
- Nitronex (USA);
- EudynaDevices (Japan);
- XeroWafer.
It is known that porous indium phosphide emits in the visible spectrum. This can be considered as a promising material for the development of lasers and LEDs. On this basis, it can be assumed that the number of buyers enter Kogut manufacturers of this type of optoelectronic devices:
1. Company "Danilin - SvetodiodnyeTehnologii" Ekaterinburg;
2. QM lightingCo., Ltd, China;
3. Lighting Plant "Svetorezerv", Moscow.
Porous indium phosphide is considered a number of scientific groups as a promising material for solar cells on ihosnove. Among the manufacturers of solar panels (they are potential buyers of products):
1) Company "solar wind", Krasnodar, Russia
2) Research-and-production center of the plant "Krasnoeznamya", Ryazan, Russia
3) LLC "Afros", Sevastopol, Ukraine
4) SuntechPowerHoldings (STP), China